Defects reduction of Ge epitaxial film in a...

APL Materials 2015 / 01 Vol. 3; Iss. 1

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
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Volume:
3
Language:
english
Journal:
APL Materials
DOI:
10.1063/1.4905487
Date:
January, 2015
File:
PDF, 4.84 MB
english, 2015
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