![](/img/cover-not-exists.png)
Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors
Moussavou, Manel, Cavassilas, Nicolas, Dib, Elias, Bescond, MarcVolume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4930567
Date:
September, 2015
File:
PDF, 2.10 MB
english, 2015