Atomic layer etching of InGaAs by controlled ion beam

Journal of Physics D Applied Physics 2017 / 06 Vol. 50; Iss. 25

Atomic layer etching of InGaAs by controlled ion beam

Park, Jin Woo, Kim, Doo San, Mun, Mu Kyeom, Lee, Won Oh, Kim, Ki Seok, Yeom, Geun Young
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Volume:
50
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa70c8
Date:
June, 2017
File:
PDF, 1.04 MB
english, 2017
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