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Investigation of thin oxide layer removal from Si substrates using an SiO 2 atomic layer etching approach: the importance of the reactivity of the substrate
Metzler, Dominik, Li, Chen, Lai, C Steven, Hudson, Eric A, Oehrlein, Gottlieb SVolume:
50
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa71f1
Date:
June, 2017
File:
PDF, 1.28 MB
english, 2017