[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B.Year:
2017
Language:
english
DOI:
10.1109/IRPS.2017.7936334
File:
PDF, 567 KB
english, 2017