Power switching transistors based on gallium nitride...

Power switching transistors based on gallium nitride epitaxial heterostructures

Erofeev, E. V., Fedin, I. V., Yurjev, Y. N.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739717020020
Date:
May, 2017
File:
PDF, 1.72 MB
english, 2017
Conversion to is in progress
Conversion to is failed