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Power switching transistors based on gallium nitride epitaxial heterostructures
Erofeev, E. V., Fedin, I. V., Yurjev, Y. N.Volume:
46
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739717020020
Date:
May, 2017
File:
PDF, 1.72 MB
english, 2017