X-ray reflectometry and simulation of the parameters of SiC...

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

Kukushkin, S. A., Nussupov, K. Kh., Osipov, A. V., Beisenkhanov, N. B., Bakranova, D. I.
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Volume:
59
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/s1063783417050195
Date:
May, 2017
File:
PDF, 1.92 MB
english, 2017
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