Electron and hole accumulations at GaN/AlInN/GaN interfaces...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors

Yoshida, Shotaro, Ikeyama, Kazuki, Yasuda, Toshiki, Furuta, Takashi, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FD10
Date:
May, 2016
File:
PDF, 1.18 MB
english, 2016
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