P/He ion implant isolation technology for AlGaN/GaN HFETs

Electronics Letters 1998 Vol. 34; Iss. 2

P/He ion implant isolation technology for AlGaN/GaN HFETs

Hanington, G., Hsin, Y.M., Liu, Q.Z., Asbeck, P.M., Lau, S.S., Asif Khan, M., Yang, J.W., Chen, Q.
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Volume:
34
Year:
1998
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19980091
File:
PDF, 529 KB
english, 1998
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