The stability of tin silicon oxide thin-film transistors with different annealing temperatures
Yang, Jianwen, Fu, Ruofan, Han, Yanbing, Meng, Ting, Zhang, QunVolume:
115
Language:
english
Journal:
EPL (Europhysics Letters)
DOI:
10.1209/0295-5075/115/28006
Date:
July, 2016
File:
PDF, 1.46 MB
english, 2016