Characteristics of InP on GaAs substrate using Zn-doped...

Journal of Materials Science: Materials in Electronics 2017 / 7 Vol. 28; Iss. 13

Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers

He, Yang, Sun, Yurun, Zhao, Yongming, Yu, Shuzhen, Dong, Jianrong
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Volume:
28
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-017-6724-x
Date:
July, 2017
File:
PDF, 1.07 MB
english, 2017
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