Reliability Wearout Mechanisms in Advanced CMOS Technologies || Dielectric Breakdown of Gate Oxides: Physics and Experiments
Strong, Alvin W., Wu, Ernest Y., Vollertsen, Rolf-Peter, Su, Jordi, La Rosa, Giuseppe, Rauch, Stewart E., Sullivan, Timothy D.Volume:
10.1002/97
Year:
2009
Language:
english
DOI:
10.1002/9780470455265.ch3
File:
PDF, 3.03 MB
english, 2009