Thermal etching rate of GaN during MOCVD growth...

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

Zhang, Feng, Ikeda, Masao, Zhang, Shuming, Liu, Jianping, Tian, Aiqin, Wen, Pengyan, Cheng, Yang, Yang, Hui
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
475
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.05.035
Date:
October, 2017
File:
PDF, 627 KB
english, 2017
Conversion to is in progress
Conversion to is failed