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Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures
Zhang, Feng, Ikeda, Masao, Zhang, Shuming, Liu, Jianping, Tian, Aiqin, Wen, Pengyan, Cheng, Yang, Yang, HuiVolume:
475
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.05.035
Date:
October, 2017
File:
PDF, 627 KB
english, 2017