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The key role of a smooth impurity potential in formation of the hole spectrum for p-Ge/Ge 1- x Si x heterostructures in the quantum Hall regime
Arapov, Yu G, Alshanskii, G A, Harus, G I, Neverov, V N, Shelushinina, N G, Yakunin, M V, Kuznetsov, O AVolume:
13
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/13/1/319
Date:
February, 2002
File:
PDF, 241 KB
english, 2002