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Hole mobility degradation by remote Coulomb scattering and charge distribution in Al 2 O 3 /GeO x gate stacks in bulk Ge pMOSFET with GeO x grown by ozone oxidation
Zhou, Lixing, Wang, Xiaolei, Ma, Xueli, Xiang, Jinjuan, Yang, Hong, Zhao, Chao, Ye, Tianchun, Wang, WenwuVolume:
50
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aa6f96
Date:
June, 2017
File:
PDF, 1.62 MB
english, 2017