Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature
Lin, Guangyang, Wang, Chen, Li, Cheng, Chen, Chaowen, Huang, Zhiwei, Huang, Wei, Chen, Songyan, Lai, Hongkai, Jin, Chunyan, Sun, JiamingVolume:
108
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4949532
Date:
May, 2016
File:
PDF, 1.43 MB
english, 2016