Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
Russell, Stephen A.O., Jennings, Michael R., Dai, Tian Xiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, Philip A., Pérez-Tomás, AmadorVolume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.155
Date:
May, 2017
File:
PDF, 758 KB
english, 2017