Design Optimization of a High Temperature 1.2 kV 4H-SiC...

Materials Science Forum 2017 / 5 Vol. 897

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

Elahipanah, Hossein, Thierry-Jebali, Nicolas, Reshanov, Sergey A., Kaplan, Wlodek, Zhang, A., Lim, Jang Kwon, Bakowski, Mietek, Östling, Mikael, Schöner, Adolf
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Volume:
897
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.897.455
Date:
May, 2017
File:
PDF, 661 KB
english, 2017
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