[IEEE 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2016.7.18-2016.7.21)] 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Effect of formation temperature on quality of gate dielectric on germanium substrate
Wei, Erh-Jye, Tsui, Bing-Yue, Wu, Pin-JiunYear:
2016
DOI:
10.1109/ipfa.2016.7564294
File:
PDF, 488 KB
2016