[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
Lee, M. H., Chen, P.-G., Fan, S.-T., Kuo, C.-Y., Chen, H.-H., Gu, S.-S., Chou, Y.-C., Tang, C.-H., Hong, R.-C., Wang, Z.-Y., Liao, M.-H., Li, K.-S., Chen, M.-C., Liu, C. W.Year:
2017
Language:
english
DOI:
10.1109/VLSI-TSA.2017.7942466
File:
PDF, 578 KB
english, 2017