[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
Hashemi, Pouya, Ando, Takashi, Balakrishnan, Karthik, Koswatta, Siyuranga, Kam-Leung Lee,, Ott, John A., Chan, Kevin, Bruley, John, Engelmann, Sebastian U., Narayanan, Vijay, Leobandung, Effendi, Mo,Year:
2017
Language:
english
DOI:
10.1109/VLSI-TSA.2017.7942468
File:
PDF, 539 KB
english, 2017