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Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates
Kulbachinskii, V. A., Oveshnikov, L. N., Lunin, R. A., Yuzeeva, N. A., Galiev, G. B., Klimov, E. A., Pushkarev, S. S., Maltsev, P. P.Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615070131
Date:
July, 2015
File:
PDF, 521 KB
english, 2015