On the growth mechanism of multicrystalline silicon ingots...

Japanese Journal of Applied Physics 2017 / 07 Vol. 56; Iss. 7

On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads

Muramatsu, Tetsurou, Takahashi, Isao, Babu, G. Anandha, Usami, Noritaka
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.075502
Date:
July, 2017
File:
PDF, 1.58 MB
english, 2017
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