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[IEEE 2016 International Conference on Emerging Technologies (ICET) - Islamabad, Pakistan (2016.10.18-2016.10.19)] 2016 International Conference on Emerging Technologies (ICET) - A high current enhancement type N-channel InGaAs MOSFET on InP substrate with a maximum drain current of 1.3 A/mm
Ali, Muhammad, Saeed, JunaidYear:
2016
Language:
english
DOI:
10.1109/ICET.2016.7813206
File:
PDF, 794 KB
english, 2016