Experimental band alignment of Ta 2 O 5 /GaN for MIS-HEMT...

Microelectronic Engineering 2017 / 06 Vol. 178

Experimental band alignment of Ta 2 O 5 /GaN for MIS-HEMT applications

Sawangsri, K., Das, P., Supardan, S.N., Mitrovic, I.Z., Hall, S., Mahapatra, R., Chakraborty, A.K., Treharne, R., Gibbon, J., Dhanak, V.R., Durose, K., Chalker, P.R.
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Volume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.04.010
Date:
June, 2017
File:
PDF, 1.11 MB
english, 2017
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