A robust and area-efficient guard ring edge termination...

Materials Science in Semiconductor Processing 2017 / 09 Vol. 68

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

Deng, Xiaochuan, Guo, Yuanxu, Dai, Tianxiang, Li, Chengzhan, Chen, Ximing, Chen, Wanjun, Zhang, Yourun, Zhang, Bo
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Volume:
68
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.06.019
Date:
September, 2017
File:
PDF, 2.25 MB
english, 2017
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