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A gate-width scalable 90-nm MOSFET nonlinear model including DC/RF dispersion effects valid up to 50 GHz
Yu, Panpan, Ling, Sun, Tian, Xuenong, Cheng, Jiali, Gao, JianjunVolume:
135
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.06.029
Date:
September, 2017
File:
PDF, 625 KB
english, 2017