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[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - The impact of fin number on device's performance and reliability in tri-gate FinFETs
Yeh, Wen-Kuan, Chen, Po-Ying, Shih, Chia-Hung, Zhang, Wenqi, Yang, Yi-LinYear:
2017
Language:
english
DOI:
10.1109/edtm.2017.7947491
File:
PDF, 556 KB
english, 2017