Growth of tetragonal Si via plasma-enhanced epitaxy
Chen, Wanghua, Hamon, Gwenaelle, Leal, Ronan, Maurice, Jean-Luc, Largeau, Ludovic, Roca i Cabarrocas, PereLanguage:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.7b00601
Date:
June, 2017
File:
PDF, 3.72 MB
english, 2017