Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy
Matsuhata, Hirofumi, Sugiyama, Naoyuki, Chen, Bin, Yamashita, Tamotsu, Hatakeyama, Tetsuo, Sekiguchi, TakashiLanguage:
english
Journal:
Microscopy
DOI:
10.1093/jmicro/dfw107
Date:
December, 2016
File:
PDF, 590 KB
english, 2016