[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Dense N over CMOS 6T SRAM cells using 3D Sequential Integration
V., C-M., Fenouillet-Beranger, C., Brocard, M., Billoint, O., Cibrario, G., Brunet, L., Garros, X., Leroux, C., Casse, M., Laurent, A., Toffoli, A., Romano, G., Kies, R., Gassilloud, R., Rambal, N., LYear:
2017
Language:
english
DOI:
10.1109/VLSI-TSA.2017.7942495
File:
PDF, 799 KB
english, 2017