Retention Model of TaO/HfOxand TaO/AlOxRRAM with Self-Rectifying Switch Characteristics
Yu-De Lin,Pang-Shiu Chen,Heng-Yuan Lee,Yu-Sheng Chen…Volume:
12
Language:
english
Journal:
Nanoscale Research Letters
DOI:
10.1186/s11671-017-2179-5
Date:
December, 2017
File:
PDF, 748 KB
english, 2017