MBE-grown InGaAsP solar cells with 1.0 eV bandgap on...

Japanese Journal of Applied Physics 2015 / 08 Vol. 54; Iss. 8S1

MBE-grown InGaAsP solar cells with 1.0 eV bandgap on InP(001) substrates for application to multijunction solar cells

Oshima, Ryuji, Makita, Kikuo, Mizuno, Hidenori, Takato, Hidetaka, Matsubara, Koji, Sugaya, Takeyoshi
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.08KE10
Date:
August, 2015
File:
PDF, 717 KB
english, 2015
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