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Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition
Shen, Xu-Qiang, Takahashi, Tokio, Ide, Toshihide, Shimizu, MitsuakiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FB02
Date:
May, 2016
File:
PDF, 1.05 MB
english, 2016