Modified model of gate leakage currents in AlGaN/GaN HEMTs

Chinese Physics B 2016 / 10 Vol. 25; Iss. 10

Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang, Yuan-Gang, Feng, Zhi-Hong, Lv, Yuan-Jie, Tan, Xin, Dun, Shao-Bo, Fang, Yu-Long, Cai, Shu-Jun
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Volume:
25
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/25/10/107106
Date:
October, 2016
File:
PDF, 372 KB
english, 2016
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