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Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS₂ Heterostructure
Horri, Ashkan, Faez, Rahim, Pourfath, Mahdi, Darvish, GhafarYear:
2017
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2716938
File:
PDF, 1.93 MB
english, 2017