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[IEEE 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Ferroelectricity in HfO2 thin films as a function of Zr doping
Karbasian, Golnaz, Tan, Ava, Yadav, Ajay, Sorensen, Eric Martin Henry, Serrao, Claudy Rayan, Khan, Asif Islam, Chatterjee, Korok, Sangwan Kim,, Chenming Hu,, Salahuddin, SayeefYear:
2017
Language:
english
DOI:
10.1109/VLSI-TSA.2017.7942488
File:
PDF, 677 KB
english, 2017