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High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation
Czernohorsky, M., Seidel, K., Kühnel, K., Niess, J., Sacher, N., Kegel, W., Lerch, W.Volume:
178
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.05.041
Date:
June, 2017
File:
PDF, 668 KB
english, 2017