Low Frequency Noise Characterization in GaN HEMTs:...

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IEEE Electron Device Letters 2017

Low Frequency Noise Characterization in GaN HEMTs: Investigation of deep levels and their physical properties

Subramani, Nandha Kumar, Couvidat, Julien, Hajjar, Ahmad Al, Nallatamby, Jean-Christophe, Floriot, Didier, Prigent, Michel, Quere, Raymond
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2717539
File:
PDF, 787 KB
english, 2017
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