Improving Analog Switching in HfOx Based Resistive Memory...

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IEEE Electron Device Letters 2017

Improving Analog Switching in HfOx Based Resistive Memory with Thermal Enhanced Layer

Wu, Wei, Wu, Huaqiang, Gao, Bin, Deng, Ning, Yu, Shimeng, Qian, He
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2719161
File:
PDF, 798 KB
english, 2017
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