Influence of the ionization-energy losses of high-energy bismuth ions on the development of helium blisters in silicon
V. F. Reutov,S. N. Dmitriev,A. S. Sohatsky,A. G. ZaluzhnyiVolume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S106378261510022X
Date:
October, 2015
File:
PDF, 1.26 MB
english, 2015