Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
V. M. Daniltsev,E. V. Demidov,M. N. Drozdov,Yu. N. Drozdov…Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616110075
Date:
November, 2016
File:
PDF, 188 KB
english, 2016