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Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm
I. A. Andreev,O. Yu. Serebrennikova,N. D. Il’inskaya,A. A. Pivovarova…Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615120027
Date:
December, 2015
File:
PDF, 476 KB
english, 2015