Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors
Rahbardar Mojaver, Hassan, Gosselin, Jean-Lou, Valizadeh, PouyaVolume:
121
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4989836
Date:
June, 2017
File:
PDF, 1.05 MB
english, 2017