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Nano Devices and Sensors || Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices
Liou, Juin J., Liaw, Shien-Kuei, Chung, Yung-HuiVolume:
10.1515/97
Year:
2016
Language:
english
DOI:
10.1515/9781501501531-010
File:
PDF, 1.11 MB
english, 2016