Improving the barrier ability of Ti in Cu through-silicon...

Japanese Journal of Applied Physics 2017 / 04 Vol. 56; Iss. 4S

Improving the barrier ability of Ti in Cu through-silicon vias through vacuum annealing

Mariappan, Murugesan, Bea, JiChel, Fukushima, Takafumi, Ikenaga, Eiji, Nohira, Hiroshi, Koyanagi, Mitsumasa
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CC08
Date:
April, 2017
File:
PDF, 1.64 MB
english, 2017
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