Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory
Wang, Xue-Peng, Li, Xian-Bin, Chen, Nian-Ke, Chen, Qi-Dai, Han, Xiao-Dong, Zhang, Shengbai, Sun, Hong-BoVolume:
136
Language:
english
Journal:
Acta Materialia
DOI:
10.1016/j.actamat.2017.07.006
Date:
September, 2017
File:
PDF, 1.43 MB
english, 2017