[IEEE 2017 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2017.5.14-2017.5.17)] 2017 IEEE International Memory Workshop (IMW) - Resolving Endurance and Program Time Trade-Off of 40nm TaOx-Based ReRAM by Co-Optimizing Verify Cycles, Reset Voltage and ECC Strength
Hayakawa, Atsuna, Maeda, Kazuki, Fukuyama, Shouhei, Takishita, Hirofumi, Yasuhara, Ryutaro, Mishima, Satoshi, Takeuchi, KenYear:
2017
Language:
english
DOI:
10.1109/IMW.2017.7939101
File:
PDF, 870 KB
english, 2017