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Se-doped Ge10Sb90 for highly reliable phase-change memory with low operation power
Kim, Jeong Hoon, Byeon, Dae-Seop, Ko, Dae-Hong, Park, Jeong HeeVolume:
32
Language:
english
Journal:
Journal of Materials Research
DOI:
10.1557/jmr.2017.221
Date:
July, 2017
File:
PDF, 305 KB
english, 2017