[IEEE 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - Honolulu, HI, USA (2017.6.4-2017.6.6)] 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - A 195 GHz single-transistor fundamental VCO with 15.3% DC-to-RF efficiency, 4.5 mW output power, phase noise FoM of −197 dBc/Hz and 1.1% tuning range in a 55 nm SiGe process
Khatibi, Hamid, Khiyabani, Somayeh, Cathelin, Andreia, Afshari, EhsanYear:
2017
Language:
english
DOI:
10.1109/RFIC.2017.7969040
File:
PDF, 1.59 MB
english, 2017